(China (Mainland))
Product Summary
The ISSI IS61LV25616AL-10TLI is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The IS61LV25616AL-10TLI is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the IS61LV25616AL-10TLI assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
Parametrics
IS61LV25616AL-10TLI absolute maximum ratings: (1)Terminal Voltage with Respect toGND, VTERM: -0.5 to VDD+0.5V; (2)Storage Temperature, TSTG: -65 to +150℃; (3)Power Dissipation, PT: 1.0W.
Features
IS61LV25616AL-10TLI features: (1)High-speed access time: 10, 12ns; (2)CMOS low power operation; (3)Low stand-by power: Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial temperature available; (10)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IS61LV25616AL-10TLI |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
|
|
||||||||||||
 |
IS61LV25616AL-10TLI-TR |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
|
|
||||||||||||